Dr. Hichem Bencherif

PhD, Assistant Professor

Electronic Department, Mostefa Benboulaid Batna2 University, Batna


+213 (0) 674 82 13 63


Hichem Bencherif received a Ph.D. degree ……..

[2015-2020] PhD. degree in Microelectronics

Mostefa Benboulaid university Batna 2 Algeria

Thesis title. Study and modeling of low power 4H-SiC MOSFET for photovoltaic applications.

[2012-2015] M.Sc. degree in Microelectronics

Mostefa Benboulaid university Batna 2 Algeria

Thesis title: Analytical modeling and performance study of SiGe solar cell

[2009-2010] Industrial electrical technician.

[2002-2007] Engineer degree in Electronics.

University of Batna 2, Algeria

Thesis title: Realization d’un controleur numerique de temperature a base de pic 16f84.

  • Solar cells (Analytical modeling, FEM, FDTD and Monte Carlo approaches)
  • Wide band gap devices
  • Antireflecting coating
  • Artificial Intelligence and Soft-Computing

Having very good experience with solving nonlinear partial differential equation analytically and numerically using different mathematical techniques (Finite Differences, Finite Elements, Finite Volumes, …) and the modelling of nano and micro devices (Solar cells, Sensors, Transistors, ,..) Moreover, I have a good knowledge with charge transport phenomena and quantum mechanics such as ballistic transport, scattering transport, quantum open systems, quantum dots, Plasmonic. I enclosed in my studies different nonlinear physical and electrical effects for micro and nano-devices; transport coefficients in semiconductors; morphology impact on solar cells structures; interface traps in power transistors. The development of new approaches to study the assessment of optical (absorption) degradation at deep submicron level of photovoltaic and optoelectronic devices using analytical models is also concerned. Currently, I try to extend my work to perovskite, kesterite and organic solar cell through studying quantum transport, the nonlinear phenomena and their stability in the presence of applied electric field and charge trapping.